N-Channel Enhancement Mode Avalanche Rated

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IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：295.69 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

• FEATURES • Drain Source Voltage- : VDSS= 600V(Min) • Static drain-source on-resistance : RDS(on) ≤ 1.1Ω@VGS=10V • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATION • DC/DC Converter • Ideal for high-frequenc

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ISC

无锡固电

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • Plastic overmolded tab for electrical isolation • International standard package • Avanlanche rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings Appli

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IXYS

艾赛斯

N通道标准 Polar™ MOSFET

• 国际标准包装 \n• 动态dv/dt评级\n• 较低的RDS(ON)和Qg\n• 雪崩评级\n• 较低的封装电感;

Littelfuse

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