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IXTQ150N15P

PolarHTTM Power MOSFET N-Channel Enhancement Mode

PolarHT™PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

IXYS

IXYS Integrated Circuits Division

IXTQ150N15P

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FIR150N15ANFG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半导体深圳市福斯特半导体有限公司

IXFH150N15P

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=150A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V APPLICATIONS ·Switching ·Converters

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH150N15P

PolarHT??HiPerFETPowerMOSFET

Features ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Integrated Circuits Division

IXFK150N15

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier App

IXYS

IXYS Integrated Circuits Division

IXFK150N15P

PolarHT??HiPerFETPowerMOSFET

Features ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Integrated Circuits Division

IXFN150N15

HiPerFETPowerMOSFET

SingleMOSFETDie Features ●Internationalstandardpackage ●Encapsulatingepoxymeets UL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●

IXYS

IXYS Integrated Circuits Division

IXFR150N15

HiPerFETPowerMOSFETsISOPLUS247

HiPerFET™PowerMOSFETsISOPLUS247™(ElectricallyIsolatedBackside) SingleMOSFETDie Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowdraintotabcapacitance(

IXYS

IXYS Integrated Circuits Division

IXFR150N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=105A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFX150N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=150A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFX150N15

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier App

IXYS

IXYS Integrated Circuits Division

IXTK150N15P

PolarHTTMPowerMOSFETN-ChannelEnhancementMode

PolarHT™PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

IXYS

IXYS Integrated Circuits Division

IXTK150N15P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    IXTQ150N15P

  • 功能描述:

    MOSFET 150 Amps 150V 0.013 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXYS
24+
TO-3P
30000
晶体管-分立半导体产品-原装正品
询价
2015+
1500
公司现货库存
询价
Littelfuse/IXYS
23+
TO-3P
7814
支持大陆交货,美金交易。原装现货库存。
询价
IXYS
23+
QFN
18000
询价
IXYS
08+(pbfree)
TO-3P
8866
询价
IXYS
16+
NA
8800
原装现货,货真价优
询价
IXYS
23+
TO-3P
5000
原装正品,假一罚十
询价
IXYS
1816+
TO-247
6523
科恒伟业!只做原装正品,假一赔十!
询价
23+
N/A
45990
正品授权货源可靠
询价
IXYS/艾赛斯
22+
原厂原封
4875
只做原装 提供一站式配套供货 中利达
询价
更多IXTQ150N15P供应商 更新时间2024-5-16 23:38:00