Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated

Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

文件：191.96 Kbytes 页数：6 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on) ≤ 29mΩ@VGS=10V • Fully characterized avalanche voltage and current • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation ​​​​​​​ • APPLICATION • DC/DC Converters • High Spe

文件：296.05 Kbytes 页数：2 Pages

ISC

无锡固电

N通道沟槽栅MOSFET

• 国际标准包装\n• 低RDS(ON)\n• 雪崩评级\n• 高电流处理能力\n• 快速本征整流器;

Littelfuse

力特

Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated

Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

文件：191.96 Kbytes 页数：6 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：302.22 Kbytes 页数：2 Pages

ISC

无锡固电