PolarHV Power MOSFET

PolarHV™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

文件：246.87 Kbytes 页数：4 Pages

IXYS

艾赛斯

N-Channel Enhancement Mode

PolarHV™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

文件：158.52 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on) ≤ 740mΩ@VGS=10V • Fully characterized avalanche voltage and current • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATION • DC/DC Converter • Switch-Mode and Resonant-

文件：295.2 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

• FEATURES • Drain Source Voltage- : VDSS= 600V(Min) • Static drain-source on-resistance : RDS(on) ≤ 0.74Ω@VGS=10V • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATION • DC/DC Converter • Ideal for high-frequen

文件：296.25 Kbytes 页数：2 Pages

ISC

无锡固电

PolarHV Power MOSFET

PolarHV™ Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Features • Plastic overmolded tab for electrical isolation • International standard package • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect

文件：53.27 Kbytes 页数：2 Pages

IXYS

艾赛斯

N通道标准 Polar™ MOSFET

• 国际标准包装 \n• 动态dv/dt评级\n• 较低的RDS(on)和Qg\n• 雪崩评级\n• 较低的封装电感;

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