首页 >IXTQ100N25P>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IXTQ100N25P | PolarHT Power MOSFET N-Channel Enhancement Mode PolarHT™PowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Integrated Circuits Division |  | |
PolarHTHiPerFETPowerMOSFET | IXYS IXYS Integrated Circuits Division | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=100A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=27mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | ||
HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Ap | IXYS IXYS Integrated Circuits Division | | ||
N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Low HiPerFETPowerMOSFETs SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackage •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwi | IXYS IXYS Integrated Circuits Division | | ||
HiPerFETPowerMOSFETsISOPLUS247 HiPerFET™PowerMOSFETsISOPLUS247™(ElectricallyIsolatedBackside) N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowd | IXYS IXYS Integrated Circuits Division | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=27mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=25.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=37mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Ap | IXYS IXYS Integrated Circuits Division | | ||
PolarHTPowerMOSFETN-ChannelEnhancementMode PolarHT™PowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Integrated Circuits Division | | ||
N-ChannelPowerMOSFET DESCRIPTION ·DrainCurrent–ID=100A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=50mΩ（max）@VGS=10V ·UnclampedInductiveSwitching APPLICATIONS ·Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
PolarHTPowerMOSFETN-ChannelEnhancementMode PolarHT™PowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Integrated Circuits Division | | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
Nch250V10APowerMOSFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 |  | ||
SILICONN-CHANNELMOSFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |
详细参数
- 型号：
IXTQ100N25P
- 功能描述：
MOSFET 100 Amps 250V 0.027 Rds
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
23+ |
TO-3P |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
IXYS/艾赛斯 |
2021+ |
TO247 |
3580 |
原装现货/15年行业经验欢迎询价 |
询价 | ||
IXYS/艾赛斯 |
22+ |
PDFN-5X6 |
19 |
只做原装进口 免费送样!! |
询价 | ||
IXYS/Littelfuse |
23+ |
TO-247 |
30 |
只做原装提供一站式配套供货中利达 |
询价 | ||
Littelfuse/IXYS |
23+ |
TO-3P |
7814 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
IXYS |
2017+ |
原厂封装 |
25896 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
IXYS |
23+ |
TO-3P |
1520 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
询价 | ||
08+(pbfree) |
8866 |
询价 | |||||
IXYS |
2020+ |
TO-247 |
44 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
IXYS |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 |
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