N-Channel Enhancement Mode Avalanche Rated

N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

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IXYS

艾赛斯

N通道标准 Polar™ MOSFET

• 国际标准包装 \n• 动态dv/dt评级\n• 较低的RDS(on)和Qg\n• 雪崩评级\n• 较低的封装电感;

Littelfuse

力特

TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM

ISOTOP TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new energy design also offers a drain–to–source diode with fast recovery time. Designed for hig

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MOTOROLA

摩托罗拉

TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for hi

文件：237.96 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for hi

文件：237.96 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉