PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

N-Channel Enhancement Mode Avalanche Rated Features l Fast Recovery diode l Unclamped Inductive Switching (UIS) rated l International standard packages l Low package inductance - easy to drive and to protect

文件：357.81 Kbytes 页数：6 Pages

IXYS

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Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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HIGH SPEED IGBT IN NPT-TECHNOLOGY

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature -

文件：435.61 Kbytes 页数：14 Pages

Infineon

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High speed switching

文件：1.57088 Mbytes 页数：8 Pages

KEC

KEC(Korea Electronics)