IXTY01N100D

N-Channel, Depletion Mode High Voltage MOSFET

HighVoltageMOSFET N-Channel,DepletionMode Features ●NormallyONmode ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Fastswitchingspeed Applications ●Levelshifting ●Triggers ●Solidstaterelays ●Currentregulators

IXTY01N100D

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=0.1A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=110Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IXTY01N100D

Power MOSFET

IXTY01N100D

N沟道耗尽型MOSFET; • “常开”运行状态\n• 线性模式容限\n• 内部标准封装\n• 拥有UL 94 V-0易燃性认证 成型环氧树脂\n;

IXTY01N100D_17

Power MOSFET

IXTP01N100

HighVoltageMOSFET

HighVoltageMOSFET N-Channel,DepletionMode Features ●NormallyONmode ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Fastswitchingspeed Applications ●Levelshifting ●Triggers ●Solidstaterelays ●Currentregulators

IXTP01N100D

PowerMOSFET

IXTP01N100D

HighVoltageMOSFET

HighVoltageMOSFET N-Channel,DepletionMode Features ●NormallyONmode ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Fastswitchingspeed Applications ●Levelshifting ●Triggers ●Solidstaterelays ●Currentregulators

IXTP01N100D

N-Channel,DepletionModeHighVoltageMOSFET

HighVoltageMOSFET N-Channel,DepletionMode Features ●NormallyONmode ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Fastswitchingspeed Applications ●Levelshifting ●Triggers ●Solidstaterelays ●Currentregulators

IXTU01N100

HighVoltageMOSFETN-Channel,EnhancementMode

HighVoltageMOSFET N-Channel,EnhancementMode Features •InternationalstandardpackagesJEDECTO-251AA,TO-252AA •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Fastswitchingtimes Applications •Levelshifting •Triggers •Solidstaterelays •Currentre