N-Channel, Depletion Mode High Voltage MOSFET

High Voltage MOSFET N-Channel, Depletion Mode Features ● Normally ON mode ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Fast switching speed Applications ● Level shifting ● Triggers ● Solid state relays ● Current regulators

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IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=0.1A@ TC=25℃ ·Drain Source Voltage -VDSS=1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) =110Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

Power MOSFET

文件：164.45 Kbytes 页数：6 Pages

IXYS

艾赛斯

Power MOSFET

文件：164.45 Kbytes 页数：6 Pages

IXYS

艾赛斯

N沟道耗尽型MOSFET

• “常开”运行状态\n• 线性模式容限\n• 内部标准封装\n• 拥有UL 94 V-0易燃性认证 成型环氧树脂;

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