PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

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IXYS

艾赛斯

iscN-Channel MOSFET Transistor

·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.202Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators

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ISC

无锡固电

E Series Power MOSFET

文件：162.58 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

iscN-Channel MOSFET Transistor

文件：323.33 Kbytes 页数：2 Pages

ISC

无锡固电