N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated

LinearL2™ Power MOSFET w/Extended FBSOA N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated Features • Designed for Linear Operation • International Standard Packages • Avalanche Rated • Guaranteed FBSOA at 75°C Advantages • Easy to Mount • Space Savings • High Power Density A

文件：164.52 Kbytes 页数：5 Pages

IXYS

艾赛斯

Isc N-Channel MOSFET Transistor

文件：363.33 Kbytes 页数：2 Pages

ISC

无锡固电

N通道线性MOSFET

• 专为线性操作设计\n• 75°C条件下FBSOA得到保证\n• 低导通电阻RDS(on)\n• 雪崩评级\n• 国际标准包装\n• 拥有UL 94 V-0易燃性认证 成型环氧树脂;

Littelfuse

力特

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-3PL package • Low input capacitance and gate charge • High speed switching • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications • Load switch •

文件：267.19 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated

LinearL2™ Power MOSFET w/Extended FBSOA N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated Features • Designed for Linear Operation • International Standard Packages • Avalanche Rated • Guaranteed FBSOA at 75°C Advantages • Easy to Mount • Space Savings • High Power Density A

文件：164.52 Kbytes 页数：5 Pages

IXYS

艾赛斯

N-Channel MOSFET

DESCRIPTION · Drain Current -ID= 100A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 24mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC converter · Battery Chargers · High Speed Power Switching Applications

文件：543.46 Kbytes 页数：3 Pages

ISC

无锡固电