Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Features • International standard package JEDEC TO-247 AD • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance (

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IXYS

艾赛斯

P-Channel: Standard Power MOSFETs

·BVDSS= -85V, -100V, -150V, -200V, -500 and -600V \n·ID(25): -8A to -52A \n·TO-220, TO-247, TO-263, TO-3P, TO-268 case style \n·Rugged, square SOA\n·Rugged PolarP Process\n·Low Gate Charge (Qg) for simple drive requirement\n·Low Package Inductance (Easy to drive and protect)\n·High Power Dissipation;

Littelfuse

力特

Switching Regulator Applications

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TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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TOSHIBA

东芝

iscN-Channel MOSFET Transistor

文件：332.87 Kbytes 页数：2 Pages

ISC

无锡固电