High Voltage MOSFET N-Channel, Depletion Mode

Features ● Normally ON mode ● Low RDS(on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Fast switching speed Applications ● Level shifting ● Triggers ● Solid state relays ● Current regulators

文件：93.27 Kbytes 页数：2 Pages

IXYS

艾赛斯

High Voltage Power MOSFET

文件：213.74 Kbytes 页数：4 Pages

IXYS

艾赛斯

N沟道耗尽型MOSFET

• “常开”运行状态\n• 线性模式容限\n• 内部标准封装\n• 拥有UL 94 V-0易燃性认证 成型环氧树脂;

Littelfuse

力特

High Voltage Power MOSFET

文件：213.74 Kbytes 页数：4 Pages

IXYS

艾赛斯

High Voltage MOSFET N-Channel, Depletion Mode

Features ● Normally ON mode ● Low RDS(on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Fast switching speed Applications ● Level shifting ● Triggers ● Solid state relays ● Current regulators

文件：93.27 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=0.2A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =30Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298 Kbytes 页数：2 Pages

ISC

无锡固电