PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

N-Channel Enhancement Mode Avalanche Rated Features l Fast Recovery diode l Unclamped Inductive Switching (UIS) rated l International standard packages l Low package inductance - easy to drive and to protect

文件：357.81 Kbytes 页数：6 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.24Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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ISC

无锡固电

N通道标准 Polar™ MOSFET

• 国际标准包装 \n• 动态dv/dt评级\n• 较低的RDS(on)和Qg\n• 雪崩评级\n• 较低的封装电感;

Littelfuse

力特

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

N-Channel Enhancement Mode Avalanche Rated Features l Fast Recovery diode l Unclamped Inductive Switching (UIS) rated l International standard packages l Low package inductance - easy to drive and to protect

文件：357.81 Kbytes 页数：6 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：323.32 Kbytes 页数：2 Pages

ISC

无锡固电

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

N-Channel Enhancement Mode Avalanche Rated Features l Fast Recovery diode l Unclamped Inductive Switching (UIS) rated l International standard packages l Low package inductance - easy to drive and to protect

文件：357.81 Kbytes 页数：6 Pages

IXYS

艾赛斯