PolarHT Power MOSFET

PolarHT™ Power MOSFET N-Channel Enhancement Mode Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

文件：224.14 Kbytes 页数：5 Pages

IXYS

艾赛斯

Isc N-Channel MOSFET Transistor

文件：194.87 Kbytes 页数：2 Pages

ISC

无锡固电

N通道标准MOSFET

• 国际标准包装 \n• 动态dv/dt评级\n• 较低的RDS(on)和Qg\n• 雪崩评级\n• 较低的封装电感;

Littelfuse

力特

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 102A@ TC=25℃ ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 33mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：328.43 Kbytes 页数：2 Pages

ISC

无锡固电

PolarHT HiPerFET Power MOSFET

PolarHT™ HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Features • International standard package • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings •

文件：138.38 Kbytes 页数：2 Pages

IXYS

艾赛斯

PolarHV HiPerFET Power MOSFET

PolarHV™ HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Fast recovery diode • Unclamped Inducti

文件：97.32 Kbytes 页数：5 Pages

IXYS

艾赛斯