Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Features • International standard package JEDEC TO-247 AD • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance (

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IXYS

艾赛斯

P通道MOSFET

• 低RDS(on) HDMOS过程\n• 坚固的多晶硅栅极单元结构\n• 雪崩评级\n• 较低的封装电感\n• 国际标准包装;

Littelfuse

力特

P-CHANNEL ENHANCEMENT MODE POWER MOSFET/FRED

Features ● High voltage p-channel power mosfet with parallel fast switching, soft recovery fred; complements MSAFX24N50A ● Ultrafast body diode ● Rugged polysilicon gate cell structure ● Increased Unclamped Inductive Switching (UIS) capability ● Hermetically sealed, surface mount power packag

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MICROSEMI

美高森美

TO-3PL

IXYS

艾赛斯

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TO-264

IXYS/LITTELFUSE

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