LinearTM Power MOSFET w/ Extended FBSOA

Linear™ Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Avalanche Rated Features • International Standard Package • Designed for Linear Operation • Avalanche Rated • Molding Epoxy Meets UL94 V-0 Flammability Classification Advantages • Easy to Mount • Space Savings • High

文件：153.46 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

·FEATURES ·Drain Source Voltage- : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.3Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications

文件：377.22 Kbytes 页数：2 Pages

ISC

无锡固电

N通道线性MOSFET

• 专为线性操作设计\n• 雪崩评级\n• 拥有UL 94 V-0易燃性认证 成型环氧树脂\n;

Littelfuse

力特

Not for New Designs: Contact the factory for lead times (part is still available for purchase).

文件：9.05 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

MegaMOS FET

N-Channel Enhancement Mode Features ● International standard packages ● Low RDS(on) HDMOS™ process ● Rugged polysilicon gate cell structure ● Low package inductance (

文件：106.76 Kbytes 页数：4 Pages

IXYS

艾赛斯

N-Channel Enhancement Mode Power MOSFET

Description The RM12N100LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =12A RDS(ON)

文件：401.18 Kbytes 页数：6 Pages

RECTRON

丽正国际