首页 >IXTH12N100Q>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IXTH12N100Q | Not for New Designs: Contact the factory for lead times (part is still available for purchase). 文件：9.05 Kbytes 页数：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | |
IXTH12N100Q | Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 1000V 12A TO247 | IXYS 艾赛斯 | IXYS | |
MegaMOS FET N-Channel Enhancement Mode Features ● International standard packages ● Low RDS(on) HDMOS™ process ● Rugged polysilicon gate cell structure ● Low package inductance ( 文件：106.76 Kbytes 页数：4 Pages | IXYS 艾赛斯 | IXYS | ||
N-Channel Enhancement Mode Power MOSFET Description The RM12N100LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =12A RDS(ON) 文件：401.18 Kbytes 页数：6 Pages | RECTRON 丽正国际 | RECTRON |
产品属性
- 产品编号：
IXTH12N100Q
- 制造商：
IXYS
- 类别：
分立半导体产品 > 晶体管 - FET，MOSFET - 单个
- 系列：
Q Class
- 包装：
管件
- FET 类型：
N 通道
- 技术：
MOSFET（金属氧化物）
- 25°C 时电流 - 连续漏极 (Id)：
12A（Tc）
- 安装类型：
通孔
- 供应商器件封装：
TO-247（IXTH）
- 封装/外壳：
TO-247-3
- 描述：
MOSFET N-CH 1000V 12A TO247
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
20+ |
TO-247 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
IXYS |
25+ |
TO-247 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IXYS |
22+ |
NA |
18 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IXYS |
22+ |
TO2473 |
9000 |
原厂渠道,现货配单 |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-247 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
IXYS |
2022+ |
TO-247-3 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
IXYS |
25+ |
TO-247 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
IXYS/艾赛斯 |
24+ |
TO-247 |
60000 |
询价 |
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