Standard Power MOSFET

Features • International standard package JEDEC TO-247 AD • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance (

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IXYS

艾赛斯

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -16A@ TC=25℃ ·Drain Source Voltage -VDSS= -200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.16Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and Start-up Circuits

文件：322.43 Kbytes 页数：2 Pages

ISC

无锡固电

P通道MOSFET

• 低RDS(on) HDMOS过程\n• 坚固的多晶硅栅极单元结构\n• 雪崩评级\n• 较低的封装电感\n• 国际标准包装;

Littelfuse

力特

SUPER FAST RECOVERY RECTIFIER

文件：68.19 Kbytes 页数：2 Pages

CHENMKO

力勤