N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • Molding Epoxies Weet UL 94 V-0 Flammability Classification • Fast Intrinsic Diode • Low Package Inductance Advantages • Easy to Mount • Space Savings •

文件：124.27 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=1500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =2.0Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：367.96 Kbytes 页数：2 Pages

ISC

无锡固电

N通道标准高电压MOSFET

• 国际标准包装\n• 快速切换时间\n• 雪崩评级\n• 坚固的多晶硅栅极单元结构\n• 超低的RDS(on);

Littelfuse

力特

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • Molding Epoxies Weet UL 94 V-0 Flammability Classification • Fast Intrinsic Diode • Low Package Inductance Advantages • Easy to Mount • Space Savings •

文件：124.27 Kbytes 页数：4 Pages

IXYS

艾赛斯

N-Channel Enhancement Mode Fast Intrinsic Diode

文件：148.28 Kbytes 页数：4 Pages

IXYS

艾赛斯