N-Channel Enhancement Mode

Features • International standard package JEDEC TO-247 AD • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • High commutating dv/dt rating • Fast switching times Applications • Switch-mode and resonant-mode power supplies • Motor controls • Uninterruptible Power Sup

文件：72.34 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 75mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and High Power density

文件：322.06 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

Littelfuse

力特

N-Channel Power MOSFET

Features • Designed for Linear Operation • International Standard Packages • Avalanche Rated • Molding Epoxies Meet UL 94 V-0 Flammability Classification • Guaranteed FBSOA at 75°C Advantages • Easy to Mount • Space Savings • High Power Density Applications • Solid State Circuit Breaker

文件：349.66 Kbytes 页数：7 Pages

IXYS

艾赛斯

N通道线性MOSFET

• 专为线性操作设计\n• 75°C条件下FBSOA得到保证\n• 低导通电阻RDS(on)\n• 雪崩评级\n• 国际标准包装\n• 拥有UL 94 V-0易燃性认证 成型环氧树脂;

Littelfuse

力特