IGBT with Diode Short Circuit SOA Capability

Features ● International standard package ● Aluminium-nitride isolation - high power dissipation ● Isolation voltage 3000 V~ ● UL registered E 153432 ● Low VCE(sat) - for minimum on-state conduction losses ● Fast Recovery Epitaxial Diode - short trr and IRM ● Low c

文件：594.28 Kbytes 页数：6 Pages

IXYS

艾赛斯

IGBT

DESCRIPTION · Isolation voltage 3000 V~ · Low VCE(sat) · Fast Recovery Epitaxial Diode APPLICATIONS · AC motor speed control · DC choppers · Uninterruptible power supplies (UPS)

文件：514.179 Kbytes 页数：3 Pages

ISC

无锡固电

Short Circuit Rated PT IGBTs

·VCES :600V and 1200V\n·SCSOA capability\n·10 us short circuit withstand capability\n·B and B2 Class IGBTs with lower VCE (sat) optimized for Low to Medium Speed Applications;

Littelfuse

力特

Package：SOT-227-4，miniBLOC；包装：托盘 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：IGBT MOD 600V 160A 420W SOT227B

IXYS

艾赛斯