High Speed IGBT

VCES = 600 V IC25 = 48 A VCE(sat) = 2.5 V tfi typ = 170 ns Features International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplic

文件：107.58 Kbytes 页数：2 Pages

IXYS

艾赛斯

High Speed IGBT

VCES = 600 V IC25 = 48 A VCE(sat) = 2.5 V tfi typ = 170 ns Features International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplic

文件：107.58 Kbytes 页数：2 Pages

IXYS

艾赛斯

Short Circuit Rated PT IGBTs

·VCES :600V and 1200V\n·SCSOA capability\n·10 us short circuit withstand capability\n·B and B2 Class IGBTs with lower VCE (sat) optimized for Low to Medium Speed Applications;

Littelfuse

力特

Short Circuit Rated PT IGBTs

·VCES :600V and 1200V\n·SCSOA capability\n·10 us short circuit withstand capability\n·B and B2 Class IGBTs with lower VCE (sat) optimized for Low to Medium Speed Applications;

Littelfuse

力特

Package：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 48A 150W TO268

IXYS

艾赛斯