High Speed IGBT with Diode

VCES = 600 V IC25 = 20 A VCE(sat) = 2.5 V Features • International standard packages • Guaranteed Short Circuit SOA capability • Low VCE(sat) - for low on-state conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Fast fall time for switching spee

文件：589.11 Kbytes 页数：6 Pages

IXYS

艾赛斯

Short Circuit Rated PT IGBTs

·VCES :600V and 1200V\n·SCSOA capability\n·10 us short circuit withstand capability\n·B and B2 Class IGBTs with lower VCE (sat) optimized for Low to Medium Speed Applications;

Littelfuse

力特

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 20A 100W TO220AB

IXYS

艾赛斯

High Speed IGBT with Diode Short Circuit SOA Capability

文件：517.22 Kbytes 页数：6 Pages

IXYS

艾赛斯