PolarHV Power MOSFET

PolarHV™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

文件：246.87 Kbytes 页数：4 Pages

IXYS

艾赛斯

N-Channel Enhancement Mode

PolarHV™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

文件：158.52 Kbytes 页数：4 Pages

IXYS

艾赛斯

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：299.37 Kbytes 页数：2 Pages

ISC

无锡固电

N通道标准 Polar™ MOSFET

• 国际标准包装 \n• 动态dv/dt评级\n• 较低的RDS(on)和Qg\n• 雪崩评级\n• 较低的封装电感;

Littelfuse

力特