首页 >IXTA76P10T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IXTA76P10T | P-Channel Enhancement Mode Avalanche Rated | IXYS IXYS Corporation | IXYS | |
IXTA76P10T | TrenchP Power MOSFETs | IXYS IXYS Corporation | IXYS | |
IXTA76P10T | P-Channel Enhancement Mode Avalanche Rated | IXYS IXYS Corporation | IXYS | |
TrenchP-ChannelMOSFET FEATURES ·DrainCurrent-ID=-76A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=-10V APPLICATIONS ·High-SideSwitching ·BatteryChargerApplications ·DCChoppers ·AutomaticTestEquipment ·CurrentRegulators | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
P-ChannelEnhancementModeAvalancheRated | IXYS IXYS Corporation | IXYS | ||
TrenchPPowerMOSFETs | IXYS IXYS Corporation | IXYS | ||
P-ChannelEnhancementModeAvalancheRated | IXYS IXYS Corporation | IXYS | ||
TrenchPPowerMOSFETs | IXYS IXYS Corporation | IXYS | ||
P-ChannelEnhancementModeAvalancheRated | IXYS IXYS Corporation | IXYS |
详细参数
- 型号：
IXTA76P10T
- 功能描述：
MOSFET -76 Amps -100V 0.024 Rds
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Littelfuse/IXYS |
24+ |
TO-263AA-3 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
IXYS |
24+ |
TO-263 |
91 |
询价 | |||
IXYS |
16+ |
NA |
8800 |
原装现货,货真价优 |
询价 | ||
IXYS |
23+ |
TO-263-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IXYS |
1931+ |
N/A |
775 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
IXYS |
1809+ |
TO-263 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IXYS |
22+ |
NA |
775 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IXYS/艾赛斯 |
21+ |
NA |
12820 |
只做原装,质量保证 |
询价 | ||
IXYS |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
询价 | ||
IXYS/艾赛斯 |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
询价 |
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