N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS=1000V(Min) · Static Drain-Source On-Resistance -RDS(on) = 450mΩ(Max)@VGS= 20V APPLICATIONS · DC-DC Converters · Battery Chargers · Temperature and Lighting Controls

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ISC

无锡固电

Power MOSFETs with Extended FBSOA

文件：97.81 Kbytes 页数：5 Pages

IXYS

艾赛斯

N通道线性MOSFET

• 专为线性操作设计\n• 75°C条件下FBSOA得到保证\n• 雪崩评级\n• 国际标准包装\n• 拥有UL 94 V-0易燃性认证 成型环氧树脂;

Littelfuse

力特

N-Channel Power MOSFET

文件：134.05 Kbytes 页数：6 Pages

IXYS

艾赛斯

Power MOSFETs with Extended FBSOA

文件：97.81 Kbytes 页数：5 Pages

IXYS

艾赛斯

N-Channel Enhancement Mode Power MOSFET

General Features VDS = 100V,ID =30A Special process technology for high ESD capability High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation RDS(ON)

文件：362.66 Kbytes 页数：7 Pages

RECTRON

丽正国际