MegaMOS FET

N-Channel Enhancement Mode Features ● International standard packages ● Low RDS(on) HDMOS™ process ● Rugged polysilicon gate cell structure ● Low package inductance (

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IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.05Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

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ISC

无锡固电

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

Littelfuse

力特

isc N-Channel MOSFET Transistor

·FEATURES ·Drain Source Voltage- : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.3Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications

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ISC

无锡固电

LinearTM Power MOSFET w/ Extended FBSOA

Linear™ Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Avalanche Rated Features • International Standard Package • Designed for Linear Operation • Avalanche Rated • Molding Epoxy Meets UL94 V-0 Flammability Classification Advantages • Easy to Mount • Space Savings • High

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IXYS

艾赛斯

Not for New Designs: Contact the factory for lead times (part is still available for purchase).

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N通道线性MOSFET

• 专为线性操作设计\n• 雪崩评级\n• 拥有UL 94 V-0易燃性认证 成型环氧树脂\n;

Littelfuse

力特

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 1000V 12A TO247

IXYS

艾赛斯