Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advan

文件：123.05 Kbytes 页数：2 Pages

IXYS

艾赛斯

Standard Power MOSFET

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advan

文件：573.36 Kbytes 页数：4 Pages

IXYS

艾赛斯

P通道MOSFET

• 低RDS(on) HDMOS过程\n• 坚固的多晶硅栅极单元结构\n• 雪崩评级\n• 较低的封装电感\n• 国际标准包装;

Littelfuse

力特

Standard Power MOSFET

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advan

文件：573.36 Kbytes 页数：4 Pages

IXYS

艾赛斯

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advan

文件：123.05 Kbytes 页数：2 Pages

IXYS

艾赛斯

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features · High voltage p-channel power mosfet; complements MSAFX24N50A · Ultrafast body diode · Rugged polysilicon gate cell structure · Increased Unclamped Inductive Switching (UIS) capability · Hermetically sealed, surface mount power package · Low package inductance · Very

文件：49.11 Kbytes 页数：2 Pages

Microsemi

美高森美