P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features · High voltage p-channel power mosfet; complements MSAFX24N50A · Ultrafast body diode · Rugged polysilicon gate cell structure · Increased Unclamped Inductive Switching (UIS) capability · Hermetically sealed, surface mount power package · Low package inductance · Very

文件：49.11 Kbytes 页数：2 Pages

Microsemi

美高森美

P-Channel MOSFET

FeaturesHermetically SealedLow Package InductanceLow Thermal ResistanceRuggedized Design

Microchip

微芯科技

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advan

文件：123.05 Kbytes 页数：2 Pages

IXYS

艾赛斯

Standard Power MOSFET

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advan

文件：573.36 Kbytes 页数：4 Pages

IXYS

艾赛斯

Standard Power MOSFET

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advan

文件：573.36 Kbytes 页数：4 Pages

IXYS

艾赛斯