TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

文件：211.86 Kbytes 页数：6 Pages

IXYS

艾赛斯

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：299.57 Kbytes 页数：2 Pages

ISC

无锡固电

N通道沟槽栅MOSFET

• 国际标准包装\n• 低RDS(ON)\n• 雪崩评级\n• 高电流处理能力\n• 快速本征整流器;

Littelfuse

力特

TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design a

文件：264.86 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM

文件：205.3 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

SCHOTTKY DIODE ARRAY

DEVICE DESCRIPTION The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. The device helps suppress transients caused by transmission line reflections, cross talk and switching noise. The SDA32 consists of an array of 16 high speed Schot

文件：691.01 Kbytes 页数：4 Pages

ZETEX