High Voltage MOSFET

High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated Features • International standard packages • High voltage, Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Fast switching times Applications • Switch-mode and resonant-mode power supplies • Flyb

文件：46.64 Kbytes 页数：2 Pages

IXYS

艾赛斯

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：299.15 Kbytes 页数：2 Pages

ISC

无锡固电

N通道标准MOSFET

• 国际标准包装\n• 快速切换时间\n• 雪崩评级\n• 坚固的多晶硅栅极单元结构\n• 超低的RDS(on);

Littelfuse

力特

Polar Power MOSFET

Polar Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density Applications

文件：153.86 Kbytes 页数：4 Pages

IXYS

艾赛斯

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

文件：315.15 Kbytes 页数：2 Pages

ISC

无锡固电

N通道标准 Polar™ MOSFET

• 国际标准包装 \n• 动态dv/dt评级\n• 较低的RDS(on)和Qg\n• 雪崩评级\n• 较低的封装电感;

Littelfuse

力特