N-Channel Enhancement Mode Avalanche Rated

文件：178.21 Kbytes 页数：5 Pages

IXYS

艾赛斯

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

文件：316.47 Kbytes 页数：2 Pages

ISC

无锡固电

N通道沟槽栅MOSFET

• 国际标准包装\n• 低RDS(ON)\n• 雪崩评级\n• 高电流处理能力\n• 快速本征整流器;

Littelfuse

力特

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.02 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100C ■ LOW GATE CHARGE ■ VERY HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLI

文件：246.11 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.02 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100C ■ LOW GATE CHARGE ■ VERY HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLI

文件：246.11 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.02 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100C ■ LOW GATE CHARGE ■ VERY HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLI

文件：246.11 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体