首页 >IXTA10P50P>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

IXTA10P50P

PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated

PolarP™PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features •InternationalStandardPackages •AvalancheRated •RuggedPolarPTMProcess •LowPackageInductance •FastIntrinsicDiode Advantages •EasytoMount •SpaceSavings •HighPowerDensity Applications •High-

IXYS

IXYS Corporation

IXTH10P50

StandardPowerMOSFETP-ChannelEnhancementModeAvalancheRated

StandardPowerMOSFET P-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advan

IXYS

IXYS Corporation

IXTH10P50P

P-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-10A@TC=25℃ ·DrainSourceVoltage-VDSS=-500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1Ω(Max)@VGS=-10V APPLICATIONS ·PushPullAmplifiers ·High-SideSwitches ·DCChoppers ·AutomaticTestEquipment

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTH10P50P

PolarPTMPowerMOSFETsP-ChannelEnhancementModeAvalancheRated

PolarP™PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features •InternationalStandardPackages •AvalancheRated •RuggedPolarPTMProcess •LowPackageInductance •FastIntrinsicDiode Advantages •EasytoMount •SpaceSavings •HighPowerDensity Applications •High-

IXYS

IXYS Corporation

IXTP10P50P

PolarPTMPowerMOSFETsP-ChannelEnhancementModeAvalancheRated

PolarP™PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features •InternationalStandardPackages •AvalancheRated •RuggedPolarPTMProcess •LowPackageInductance •FastIntrinsicDiode Advantages •EasytoMount •SpaceSavings •HighPowerDensity Applications •High-

IXYS

IXYS Corporation

IXTQ10P50P

PolarPTMPowerMOSFETsP-ChannelEnhancementModeAvalancheRated

PolarP™PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features •InternationalStandardPackages •AvalancheRated •RuggedPolarPTMProcess •LowPackageInductance •FastIntrinsicDiode Advantages •EasytoMount •SpaceSavings •HighPowerDensity Applications •High-

IXYS

IXYS Corporation

IXTT10P50

StandardPowerMOSFETP-ChannelEnhancementModeAvalancheRated

StandardPowerMOSFET P-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advan

IXYS

IXYS Corporation

TK10P50W

MOSFETsSiliconN-ChannelMOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.327Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TK10P50W

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

V10P50P

Reducedfootprintandvolumerequiredforsurgeprotection

Littelfuselittelfuse

力特力特公司

详细参数

  • 型号:

    IXTA10P50P

  • 功能描述:

    MOSFET -10.0 Amps -500V 1.000 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
Littelfuse/IXYS
24+
TO-263
7828
支持大陆交货,美金交易。原装现货库存。
询价
IXYS
23+
TO-263
6850
只做原装正品假一赔十为客户做到零风险!!
询价
IXYS
24+
TO-263
34
询价
IXYS
24+
SMD
5500
长期供应原装现货实单可谈
询价
IXYS
23+
TO-263-3
11846
一级代理商现货批发,原装正品,假一罚十
询价
IXYS
21+
TO-263
12588
原装正品,自己库存 假一罚十
询价
IXYS
1931+
N/A
197
加我qq或微信,了解更多详细信息,体验一站式购物
询价
IXS
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
IXYS
1809+
TO-263
1675
就找我吧!--邀您体验愉快问购元件!
询价
IXYS
22+
NA
197
加我QQ或微信咨询更多详细信息,
询价
更多IXTA10P50P供应商 更新时间2025-7-23 16:12:00