PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated

PolarP™ Power MOSFETs P-Channel Enhancement Mode Avalanche Rated Features • International Standard Packages • Avalanche Rated • Rugged PolarPTM Process • Low Package Inductance • Fast Intrinsic Diode Advantages • Easy to Mount • Space Savings • High Power Density Applications • High-

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IXYS

艾赛斯

P通道MOSFET

• 快速本征二极管\n• Rugged PolarP™工艺\n• 雪崩评级\n• 较低的封装电感\n• 动态dv/dt额定;

Littelfuse

力特

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advan

文件：123.05 Kbytes 页数：2 Pages

IXYS

艾赛斯

PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated

PolarP™ Power MOSFETs P-Channel Enhancement Mode Avalanche Rated Features • International Standard Packages • Avalanche Rated • Rugged PolarPTM Process • Low Package Inductance • Fast Intrinsic Diode Advantages • Easy to Mount • Space Savings • High Power Density Applications • High-

文件：185.69 Kbytes 页数：6 Pages

IXYS

艾赛斯

P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -10A@ TC=25℃ · Drain Source Voltage -VDSS= -500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1Ω(Max)@VGS= -10V APPLICATIONS · Push Pull Amplifiers · High- Side Switches · DC Choppers · Automatic Test Equipment

文件：352.86 Kbytes 页数：2 Pages

ISC

无锡固电