N-Channel Enhancement Mode

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艾赛斯

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：266.63 Kbytes 页数：2 Pages

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无锡固电

N通道标准 Polar™ MOSFET

• 国际标准包装 \n• 动态dv/dt评级\n• 较低的RDS(on)和Qg\n• 雪崩评级\n• 较低的封装电感;

Littelfuse

力特

N-Channel Enhancement Mode

MegaMOS™ FET N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance (

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艾赛斯

isc N-Channel MOSFET Transistor

• FEATURES • Drain Source Voltage- : VDSS= 100V(Min) • Static drain-source on-resistance : RDS(on) ≤ 20mΩ@VGS=10V • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATION • DC/DC Converter • Ideal for high-frequency switching

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无锡固电

MegaMOSFET

N-Channel Enhancement Mode Features • International standard packages • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Low package inductance (

文件：111.63 Kbytes 页数：4 Pages

IXYS

艾赛斯