MSAFA75N10C

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

75N10

FastSwitchingSpeed

75N10

N-ChannelPowerMOSFET

ADM75N10

N-ChannelEnhancementModeFieldEffectTransistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM75N10usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)with

ADM75N10E

N-ChannelEnhancementModeFieldEffectTransistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM75N10EusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)with

ADM75N10Q

N-ChannelEnhancementModeFieldEffectTransistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM75N10QusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)with

CEB75N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,72A,RDS(ON)=13mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package

CEP75N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,72A,RDS(ON)=13mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package

HY75N10T

100V/75AN-ChannelEnhancementModeMOSFET

IXFH75N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=75A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=20mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco