首页 >IXTA50N20P>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IXTA50N20P | PolarHT Power MOSFET N-Channel Enhancement Mode 文件：581.45 Kbytes 页数：5 Pages | IXYS 艾赛斯 | IXYS | |
IXTA50N20P | 丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor 文件：299.05 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | |
IXTA50N20P | N通道标准 Polar™ MOSFET • 国际标准包装 \n• 动态dv/dt评级\n• 较低的RDS(on)和Qg\n• 雪崩评级\n• 较低的封装电感; | Littelfuse 力特 | Littelfuse | |
MegaMOS FET MegaMOS™ FET N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance ( 文件：111.4 Kbytes 页数：4 Pages | IXYS 艾赛斯 | IXYS | ||
isc N-Channel MOSFET Transistor 文件：380.02 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
MegaMOS FET MegaMOS™ FET N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance ( 文件：111.4 Kbytes 页数：4 Pages | IXYS 艾赛斯 | IXYS |
详细参数
- 型号：
IXTA50N20P
- 功能描述：
MOSFET 50 Amps 200V 0.06 Rds
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
24+ |
TO-263 |
8866 |
询价 | |||
IXYS |
23+ |
TO-263-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
NEC |
23+ |
TO-252 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
IXYS |
25+ |
TO-263 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IXYS |
22+ |
NA |
18 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IXYS |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
询价 | ||
IXYS |
2022+ |
TO-263-3,D2Pak(2 引线 + 接片 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
IXYS |
23+ |
TO-263-3 |
67960 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
询价 |
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