TrenchP Power MOSFETs

TrenchP™ Power MOSFETs P-Channel Enhancement Mode Avalanche Rated Features • International Standard Packages • Avalanche Rated • Extended FBSOA • Fast Intrinsic Diode • Low RDS(ON) and QG Advantages • Easy to Mount • Space Savings • High Power Density Applications • High-Side Switchi

文件：204.44 Kbytes 页数：6 Pages

IXYS

艾赛斯

丝印：D2PAK；Package：TO-263；isc P-Channel MOSFET Transistor

文件：294.82 Kbytes 页数：2 Pages

ISC

无锡固电

P通道MOSFET

• 快速本征二极管\n• 较低的Qg和RDSon\n• 雪崩评级\n• 加大的FBSOA\n• 国际标准包装;

Littelfuse

力特

isc P-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on)≤45mΩ • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATION • Hight side switching • Current regulators • Automatic test equipment

文件：295.15 Kbytes 页数：2 Pages

ISC

无锡固电

TrenchP Power MOSFETs

TrenchP™ Power MOSFETs P-Channel Enhancement Mode Avalanche Rated Features • International Standard Packages • Avalanche Rated • Extended FBSOA • Fast Intrinsic Diode • Low RDS(ON) and QG Advantages • Easy to Mount • Space Savings • High Power Density Applications • High-Side Switchi

文件：204.44 Kbytes 页数：6 Pages

IXYS

艾赛斯