N-Channel Enhancement Mode Avalanche Rated

TrenchMV Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • Ultra-low On Resistance • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • 175 ° C Operating Temperature Advantages • Easy to mount • Space savings • High p

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IXYS

艾赛斯

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V • Fully characterized avalanche voltage and current • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATION • DC/DC Converters • High Current Swi

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ISC

无锡固电

N-Channel Enhancement Mode Avalanche Rated

TrenchMV Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features ● Ultra-low On Resistance ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● 175 °C Operating Temperature Advantages ● Easy to mount ● Space savings ● High po

文件：168.84 Kbytes 页数：5 Pages

IXYS

艾赛斯

N-Channel: Trench-Gate Power MOSFETs with HiPerFET™ Options

·Trench Gate MOSFET Technology\n·Break down voltages VDSS: 36V to 300V\n·Current ratings ID25: 12A to 660A\n·Ultra-low on-state resistance RDS(on)\n·Superior avalanche ruggedness\n·Junction temperature TJ up to 175°C\n·International standard packages;

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