首页 >IXTA62N25T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IXTA62N25T | Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 250V 62A TO263 | IXYS IXYS Corporation | IXYS | |
HighCurrentMegaMOSFET HighCurrentMegaMOS™FET N-ChannelEnhancementMode Features •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Internationalstandardpackage •Fastswitchingtimes Applications •Motorcontrols •DCchoppers •Switched-modepowersupplies Adva | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=62A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=35mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
HiPerFETPowerMOSFETsSingleMOSFETDie HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Ap | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=62A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=35mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=62A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=35mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsSingleMOSFETDie HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Ap | IXYS IXYS Corporation | IXYS | ||
HighCurrentMegaMOSFET HighCurrentMegaMOS™FET N-ChannelEnhancementMode Features •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Internationalstandardpackage •Fastswitchingtimes Applications •Motorcontrols •DCchoppers •Switched-modepowersupplies Adva | IXYS IXYS Corporation | IXYS |
产品属性
- 产品编号：
IXTA62N25T
- 制造商：
IXYS
- 类别：
分立半导体产品 > 晶体管 - FET，MOSFET - 单个
- 系列：
Trench
- 包装：
管件
- FET 类型：
N 通道
- 技术：
MOSFET（金属氧化物）
- 25°C 时电流 - 连续漏极 (Id)：
62A（Tc）
- 安装类型：
表面贴装型
- 供应商器件封装：
TO-263AA
- 封装/外壳：
TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
- 描述：
MOSFET N-CH 250V 62A TO263
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
23+ |
TO-263-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
IXYS |
22+ |
NA |
18 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IXYS |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
询价 | ||
IXYS |
21+ |
TO2633 D2Pak (2 Leads + Tab) T |
13880 |
公司只售原装,支持实单 |
询价 | ||
IXYS |
23+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原装正品，支持实单 |
询价 | ||
IXYS |
2022+ |
TO-263-3,D2Pak(2 引线 + 接片 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
IXYS |
1809+ |
TO-263 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-263 |
26008 |
原装正品 华强现货 |
询价 | ||
24+ |
N/A |
69000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 |
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