P-Channel: Standard Power MOSFETs

·BVDSS= -85V, -100V, -150V, -200V, -500 and -600V \n·ID(25): -8A to -52A \n·TO-220, TO-247, TO-263, TO-3P, TO-268 case style \n·Rugged, square SOA\n·Rugged PolarP Process\n·Low Gate Charge (Qg) for simple drive requirement\n·Low Package Inductance (Easy to drive and protect)\n·High Power Dissipation;

Littelfuse

力特

P-Channel Enhancement Mode

文件：128.15 Kbytes 页数：2 Pages

IXYS

艾赛斯

P-Channel Enhancement Mode Avalanche Rated

文件：180.41 Kbytes 页数：6 Pages

IXYS

艾赛斯

P-Channel Enhancement Mode Avalanche Rated

文件：180.41 Kbytes 页数：6 Pages

IXYS

艾赛斯

P-Channel Power MOSFET

DESCRIPTION ·Drain Current –ID= -36A@ TC=25℃ ·Drain Source Voltage- : VDSS= -150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 110mΩ（max）@VGS= -10V APPLICATIONS ·Switching applications ·DC Choppers ·Automatic Test Equipment

文件：342.04 Kbytes 页数：2 Pages

ISC

无锡固电