isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=62A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-Resistance : RDS(on) =35mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：369.05 Kbytes 页数：2 Pages

ISC

无锡固电

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：880.55 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

功率 MOSFET，N 沟道，QFET®，250 V，62 A，35 mΩ，TO-3P

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •62A, 250V, RDS(on)= 35mΩ（最大值）@VGS = 10 V, ID = 31A栅极电荷低（典型值：100nC)\n•低 Crss（典型值63.5pF)\n•100% 经过雪崩击穿测试\n• 100% Avalanche Tested;

ONSEMI

安森美半导体

HiPerFET Power MOSFETs Single MOSFET Die

HiPerFET Power MOSFETs Single MOSFET Die Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Ap

文件：98.55 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 62A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 35mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：328.73 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFET Power MOSFETs Single MOSFET Die

HiPerFET Power MOSFETs Single MOSFET Die Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Ap

文件：98.55 Kbytes 页数：2 Pages

IXYS

艾赛斯