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FQA62N25

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=62A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=35mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQA62N25C

250V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

62N25

HighCurrentMegaMOSFET

HighCurrentMegaMOS™FET N-ChannelEnhancementMode Features •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Internationalstandardpackage •Fastswitchingtimes Applications •Motorcontrols •DCchoppers •Switched-modepowersupplies Adva

IXYS

IXYS Corporation

IXFK62N25

HiPerFETPowerMOSFETsSingleMOSFETDie

HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Ap

IXYS

IXYS Corporation

IXFK62N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=62A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=35mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFX62N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=62A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=35mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFX62N25

HiPerFETPowerMOSFETsSingleMOSFETDie

HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Ap

IXYS

IXYS Corporation

IXTK62N25

HighCurrentMegaMOSFET

HighCurrentMegaMOS™FET N-ChannelEnhancementMode Features •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Internationalstandardpackage •Fastswitchingtimes Applications •Motorcontrols •DCchoppers •Switched-modepowersupplies Adva

IXYS

IXYS Corporation

详细参数

  • 型号:

    FQA62N25

  • 功能描述:

    MOSFET 250V N-Channel Adv Q-FET C-Series

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
仙童
06+
TO-247
1200
原装库存
询价
FAIRCHILD
24+
TO-247
776
全新原装环保
询价
FAIRCHILD
22+
TO-247
5000
全新原装现货!自家库存!
询价
FAIRCHILD/仙童
20+
TO-3P
36900
原装优势主营型号-可开原型号增税票
询价
FAIRCHILD/仙童
22+
TO-3P
6000
十年配单,只做原装
询价
FAIRCHILD/仙童
22+
TO-3P
25000
只做原装进口现货,专注配单
询价
FAIRCHILD/仙童
23+
TO-3P
10
全新原装正品现货,支持订货
询价
FAIRCHILD
25+
TO-3P
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
FAIRCHILD/仙童
20+
TO-3P
10
进口原装现货,假一赔十
询价
FAIRCHILD/仙童
25+
TO-3P
10
原装正品,假一罚十!
询价
更多FQA62N25供应商 更新时间2025-5-21 11:46:00