N-Channel Enhancement Mode

MegaMOS™ FET N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance (

文件：73.18 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

• FEATURES • Drain Source Voltage- : VDSS= 100V(Min) • Static drain-source on-resistance : RDS(on) ≤ 20mΩ@VGS=10V • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATION • DC/DC Converter • Ideal for high-frequency switching

文件：296.25 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

Littelfuse

力特

MegaMOSFET

N-Channel Enhancement Mode Features • International standard packages • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Low package inductance (

文件：111.63 Kbytes 页数：4 Pages

IXYS

艾赛斯

MegaMOS FET

文件：53.34 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：381.13 Kbytes 页数：2 Pages

ISC

无锡固电