High Voltage MOSFET

High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance (

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艾赛斯

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

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ISC

无锡固电

N通道标准MOSFET

• 国际标准包装\n• 快速切换时间\n• 雪崩评级\n• 坚固的多晶硅栅极单元结构\n• 超低的RDS(on);

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isc N-Channel MOSFET Transistor

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无锡固电

PolarHV Power MOSFET

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N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

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