N-Channel Enhancement Mode Avalanche Rated

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • International Standard Packages • Dynamic dv/dt Rating • Avalanche Rated • Fast Intrinsic Rectifier • Low QG • Low RDS(on) • Low Drain-to-Tab Capacitance • Low Package Inductance Advantages • Easy to Mount

文件：164.69 Kbytes 页数：2 Pages

IXYS

艾赛斯

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：298.8 Kbytes 页数：2 Pages

ISC

无锡固电

N通道标准 Polar™ MOSFET

• 国际标准包装 \n• 动态dv/dt评级\n• 较低的RDS(on)和Qg\n• 雪崩评级\n• 较低的封装电感;

Littelfuse

力特

12 AMPS, 450-500V, 0.4OM/0.5OM

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件：65.16 Kbytes 页数：1 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive

文件：321.57 Kbytes 页数：2 Pages

ISC

无锡固电

Standard Power MOSFET

Features ● International standard packages ● Low R DS (on)HDMOS™ process ● Rugged polysilicon gate cell structure ●Low package inductance (

文件：97.86 Kbytes 页数：4 Pages

IXYS

艾赛斯