Short Circuit Rated PT IGBTs

·VCES :600V and 1200V\n·SCSOA capability\n·10 us short circuit withstand capability\n·B and B2 Class IGBTs with lower VCE (sat) optimized for Low to Medium Speed Applications;

Littelfuse

力特

IGBT

Features • Epitaxial Silicon drift region - fast switching - small tail current • MOS gate turn-on for drive simplicity Applications • AC motor speed control • DC servo and robot drives • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode power supplies • DC cho

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IXYS

艾赛斯

Package：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 70A 300W TO268

IXYS

艾赛斯

1200V, 35A Trench IGBT

General Description Using advanced field stop trench IGBT technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder applications. Features • Field Stop Trench Technology • High Speed Switching • Low Saturation V

文件：732.96 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

1200V, 35A Trench IGBT

General Description Using advanced field stop trench IGBT technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder applications. Features • Field Stop Trench Technology • High Speed Switching • Low Saturation V

文件：732.96 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

IGBT Lightspeed Series

IGBT Lightspeed Series Features • International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD • Low switching losses • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (U

文件：53.74 Kbytes 页数：2 Pages

IXYS

艾赛斯