Short Circuit Rated PT IGBTs

·VCES :600V and 1200V\n·SCSOA capability\n·10 us short circuit withstand capability\n·B and B2 Class IGBTs with lower VCE (sat) optimized for Low to Medium Speed Applications;

Littelfuse

力特

High Current IGBT Short Circuit SOA Capability

Features • International standard packages • Very high current, fast switching IGBT • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible pow

文件：46.76 Kbytes 页数：2 Pages

IXYS

艾赛斯

Package：TO-247-3 变式；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 160A 500W PLUS247

IXYS

艾赛斯

N-Channel Super Trench Power MOSFET

General Features VDS =60V,ID =80A RDS(ON)

文件：402.83 Kbytes 页数：8 Pages

RECTRON

丽正国际

Enhancement Mode Power MOSFET

General Features VDS =60V,ID =80A RDS(ON)

文件：330.27 Kbytes 页数：7 Pages

RECTRON

丽正国际

Ultra-Fast IGBT

General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features • High Speed Switching • Low Sa

文件：567.62 Kbytes 页数：7 Pages

Fairchild

仙童半导体