丝印：80N60；Package：DFN5X6-8L；N-Channel Super Trench Power MOSFET

General Features VDS =60V,ID =80A RDS(ON)

文件：402.83 Kbytes 页数：8 Pages

RECTRON

丽正国际

MOSFET

Rectron

丽正国际

Enhancement Mode Power MOSFET

General Features VDS =60V,ID =80A RDS(ON)

文件：330.27 Kbytes 页数：7 Pages

RECTRON

丽正国际

Ultra-Fast IGBT

General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features • High Speed Switching • Low Sa

文件：567.62 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Ultra-Fast IGBT

文件：557.86 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司