分立式、高性能IGBT

飞兆的绝缘栅极双极性晶体管(IGBT)UF系列提供低导通和开关损耗。 UF系列设计用于需要高速开关特性的电机控制和一般逆变器等应用。 •高速开关\n•低饱和电压： VCE(sat) = 2.1V @ IC = 40A\n•高输入阻抗;

ONSEMI

安森美半导体

Ultra-Fast IGBT

General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features • High Speed Switching • Low Sa

文件：567.62 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Package：TO-3P-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 80A 110W TO3PF

ONSEMI

安森美半导体

Ultra-Fast IGBT

文件：557.86 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Ultra-Fast IGBT

文件：557.86 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Ultrafast IGBT

General Description Fairchilds UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed s

文件：645.83 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体