RM80N60LD

Marking：80N60；Package：TO-252-2L；Enhancement Mode Power MOSFET

GeneralFeatures VDS=60V,ID=80A RDS(ON)

80N60A

HiPerFASTIGBT

80N60B

HighCurrentIGBT

FGH80N60FD

600V,80AFieldStopIGBT

GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild®sfieldstopIGBTsoffertheoptimumperformanceforinductionheating,telecom,ESSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •HighCurrentCapability •LowSaturationVoltage:

FGH80N60FDTU

600V,80AFieldStopIGBT

GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild®sfieldstopIGBTsoffertheoptimumperformanceforinductionheating,telecom,ESSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •HighCurrentCapability •LowSaturationVoltage:

FGH80N60FDTU

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

G80N60UFD

UltrafastIGBT

GeneralDescription FairchildsUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFDseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features •Highspeeds

IXGK80N60A

HiPerFASTIGBT

IXSK80N60B

HighCurrentIGBTShortCircuitSOACapability

Features •Internationalstandardpackages •Veryhighcurrent,fastswitchingIGBT •LowVCE(sat) -forminimumon-stateconductionlosses •MOSGateturn-on -drivesimplicity Applications •ACmotorspeedcontrol •DCservoandrobotdrives •DCchoppers •Uninterruptiblepow

IXSN80N60A

HighCurrentIGBT-ShortCircuitSOACapability