1200V, 35A Trench IGBT

General Description Using advanced field stop trench IGBT technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder applications. Features • Field Stop Trench Technology • High Speed Switching • Low Saturation V

文件：732.96 Kbytes 页数：9 Pages

Fairchild

仙童半导体

1200V, 35A Trench IGBT

General Description Using advanced field stop trench IGBT technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder applications. Features • Field Stop Trench Technology • High Speed Switching • Low Saturation V

文件：732.96 Kbytes 页数：9 Pages

Fairchild

仙童半导体

1200V，35A，场截止沟道 IGBT

飞兆半导体的 1200V 沟道 IGBT 系列采用先进的场截止沟道 IGBT 技术，为光伏逆变器、UPS 和焊机等硬开关应用提供最佳性能。 •场截止沟道技术\n•高速开关\n•低饱和电压：VCE(sat) = 1.68 V @ IC = 35A\n•高输入阻抗;

ONSEMI

安森美半导体

Package：TO-264-3，TO-264AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT TRENCH/FS 1200V 70A TO264-3

ONSEMI

安森美半导体